part number ne687m03 eiaj 1 registered number 2sc5436 package outline m03 symbols parameters and conditions units min typ max f t gain bandwidth at v ce = 2 v, i c = 20 ma, f = 2 ghz ghz 9 14 v ce = 1 v, i c = 10 ma, f = 2 ghz ghz 7 12 nf noise figure at v ce = 2 v, i c = 3 ma, f = 2 ghz db 1.3 2 v ce = 1 v, i c = 3 ma, f = 2 ghz db 1.3 2 |s 21e | 2 insertion power gain at v ce = 2 v, i c = 20 ma, f = 2 ghz db 8.5 10 v ce = 1 v, i c = 10 ma, f = 2 ghz db 6 9.0 h fe 2 forward current gain at v ce = 2 v, i c = 20 ma 70 130 i cbo collector cutoff current at v cb = 5 v, i e = 0 a 0.1 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a 0.1 c re 3 feedback capacitance at v cb = 2 v, i e = 0, f = 1 mhz pf 0.4 0.8 ne687m03 nec's npn silicon transistor ? new m03 package: ? smallest transistor outline package available ? low pro?le/0.59 mm package height ? flat lead style for better rf performance ? high gain bandwidth product: f t = 14 ghz ? low noise figure: nf = 1.4 db at 2 ghz features outline dimensions (units in mm) package outline m03 electrical characteristics (t a = 25c) pin connections 1. emitter 2. base 3. collector california eastern laboratories notes: 1. electronic industrial association of japan. 2. pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. capacitance is measured with emitter and case connected to the guard terminal at the bridge. description nec's ne687m03 transistor is designed for low noise, high gain, and low cost requirements. this high f t part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. nec's new low pro?le/?at lead style "m03" package is ideal for today's portable wireless applications. the ne687 is also available in six different low cost plastic surface mount package styles. 1 3 2 1.20.05 0.80.1 +0.1 -0.05 0.15 +0.1 -0 0.3 +0.1 -0 0.2 1.4 0.1 (0.9) 0.590.05 0.45 0.45
note: 1. operation in excess of any one of these parameters may result in permanent damage. symbols parameters units ratings v cbo collector to base voltage v 5 v ceo collector to emitter voltage v 3 v ebo emitter to base voltage v 2 i c collector current ma 30 p t total power dissipation mw 90 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25c) collector to emmiter voltage, v ce (v) collector current, i c (ma) collector current vs. collector to emitter voltage typical performance curves (t a = 25c) collector current, i c (ma) dc current gain, h fe d.c. current gain vs. colector current base to emmiter voltage, v be (v) collector current, i c (ma) collector current vs. base to emitter voltage 200 a 180 a 160 a 140 a 120 a 100 a 80 a 60 a 40 a i b = 20 a 25 20 15 10 5 0 0 2.2 2.4 2.6 v ce = 1 v v ce = 2 v 500 200 100 50 20 10 1 2 5 10 20 50 100 v ce = 2v 50 40 30 20 10 0 0.5 1.0 ne687m03 ordering information part number quantity ne687m03-a NE687M03-T1-A
parameters q1 parameters q1 is 302.3e-18 mjc 0.53 bf 104 xcjc 0.27 nf 1.038 cjs 0 vaf 10 vjs 0.75 ikf 0.370 mjs 0 ise 1e-6 fc 0.37 ne 31.19 tf 5e-12 br 17.54 xtf 8 nr 1.023 vtf 0.06 var 30 itf 1.0 ikr 8.369e-3 ptf 69.1 isc 81.93e-12 tr 1.e-9 nc 4.986 eg 1.11 re 0.80 xtb 0 rb 11.10 xti 3 rbm 2.46 kf 0 irb 17e-3 af 1 rc 4.477 cje 0.415e-12 vje 0.68 mje 0.53 cjc 0.102e-12 vjc 0.8 (1) gummel-poon model schematic parameter units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps parameters 687m03 c cb 0.26e-12 c ce 0.19e-12 l b 0.4e-9 l e 0.7e-9 c cbpkg 0.08e-12 c cepkg 0.08e-12 l bx 0.12e-9 l cx 0.10e-9 l ex 0.12e-9 additional parameters units model test conditions frequency: 0.1 to 5.0 ghz bias: v ce = 0.5 v to 2.5 v, i c = 0.5 ma to 30 ma date: 11/98 hfe = 108 at 2 v, 20 ma bjt nonlinear model parameters (1) base emitter collector l bx l b l ex l e l cx c cbpkg c cb c ce c cepkg q1 ne687m03 nonlinear model ne687m03 life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury . the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec compound semiconductor devices, ltd. 04/26/2004 ordering information part number quantity ne687m03-a NE687M03-T1-A
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